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This letter presents the design of a wide band 8th harmonic mixer, using an anti-parallel pair of planar Schottky GaAs flipp-chip diodes fabricated onto a suspended quartz-based microstrip circuit. Simulations predict conversion losses are well below 23dB from 330 to 500GHz. The design offers an solution to simplify the local oscillator signal generation and realize the goal of low frequency conversion...
This paper presents the design and simulation investigation of a 850GHz low-loss subharmonical mixer based on GaAs Schottky barrier diodes. Our group analyzed the topology of subharmonic mixer, device modeling of Schottky diodes, the 3D electromagnetic passive circuits and the mixer circuitry with optimum performance. The antiparallel diodes pair is fabricated from China Electronics Technology Group...
The design of a low-cost microstrip based sub-harmonic mixer (SHM) is presented, which is feasible to be integrated with other circuit stages on the same substrate because of its good S11s. Taking the often neglected S11s as one of the goals for the mixer, this paper utilizes a 3D diode model and quasi-linear parameters to model the schottky barrier diode in the full-wave EM simulator HFSS, which...
Terahertz electromagnetic radiation (from 0.1THz to 10THz) that lies in the boundary region between light and radio waves has attracted much attention in recent years due to its certain extraordinary properties. This paper presents the design and simulation investigation of a 0.66THz low-loss subharmonical mixer based on GaAs Schottky barrier diodes. The antiparallel diodes pair is fabricated from...
In this paper, a terahertz wideband sub-harmonic mixer based on the Schottky anti-parallel diodes pair and MASTER technology is presented. The mixer circuit is fabricated on a 0.05mm quartz substrate including Schottky anti-parallel diodes pair, RF/LO transition, IF matching networks and filtering circuits. The diode circuit is fabricated on a quartz substrate directly by MASTER technology. The research...
In this paper, a 325GHz Sub-Harmonic mixer with 70GHz bandwidth is presented. It will be used for a ultra wideband remote sensing system. The mixer circuit included planar Schottky diode in a balanced configuration, the passive RF/LO and IF matching networks, filtering circuits, as well as transitions from waveguide to suspended micro-strip. Simulated results for the 325GHz mixer achieved DSB conversion...
This paper presents a new design of power divider for dual-band application, in which both short- and open-ended stubs are applied. Closed-form design equations for the proposed power divider are derived. It is observed that the proposed power divider can operate at a large frequency ratio (2.4–5). For verification, the measured, calculated and simulated performance of a dual-band power divider operating...
The paper presents the design and fabrication of a low-loss fixed-tuned 118 GHz subharmonically pumped mixer, using commercially available GaAs Schottky barrier diodes flip-chipped onto a suspended microstrip circuit. The simulation performance of the mixer exhibits a double side band (DSB) conversion loss below 10 dB over the range of 113-123-GHz, with 6 mW of local oscillator (LO) power. At 118...
This paper presents the design and simulation of a novel fixed-tuned 310-350-GHz wide-band sub-harmonic mixer. The mixer is based on an anti-parallel pair of GaAs Schottky diodes fabricated at European company. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. A best double-sideband-mixer loss of 5.7 dB was achieved with 5 mW of LO power...
This paper presents the optimization and design of a low-loss fixed-tuned 215-235-GHz sub-harmonic mixer, pumped by planar GaAs Schottky diodes fabricated by European company for space-borne radiometers. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. The GaAs Gunn oscillator is used as the local-oscillator (LO) and this paper also...
An investigation of millimeter wave high order frequency multiplier based on the inductive nonlinearity of avalanche diode is presented. The operation of high order frequency multiplication is introduced and the high order harmonics generation character under external RF field modulation is analyzed. In experiment, the output power of 6.2 mW and 9.55 mW are obtained at output frequency of 94.05 GHz...
A novel transition and power divider design for RF-module is proposed in this letter. The design approach has been developed. The special structure that is based on substrate integrated circular cavities demonstrates the advantages of compact and high flexibility. Good performances of return loss, insertion loss, phase imbalance and amplitude imbalance are observed both in the simulated and measurement...
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