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Fully oxide thin-film transistor (TFT)-based complementary metal–oxide–semiconductor (CMOS) ring oscillators are reported, for the first time, using large-area-compatible sputtering processes. The p-channel tin monoxide (SnO) and n-channel zinc oxide (ZnO) TFTs used in the CMOS inverter have inverted-staggered bottom-gate structures. The SnO TFT exhibits a threshold voltage ($V_{\rm th})$ of 3.5...
In this paper, a low propagation delay, low power, and area-efficient 4×4 load-balanced switch circuit for feedback-based system is presented. In this periodic and deterministic switch, only two DFFs are used to implement a pattern generator which is a O(N3) hardware complexity in traditional matching algorithm based N×N switch. For packet reordering, a feedback path is established in series of symmetric...
For the first time, a scalable load balanced Birkhoff-von Neumann TDM switch IC with SERDES interface circuits for high speed networking applications was implemented. Any NtimesN Birkhoff-von Neumann TDM switch could be constructed recursively from the designed TDM switch IC to achieve switching capacity of hundred gigabits per second or higher. The TDM switch IC contained a digital 8times8 TDM switch...
For the first time, we implemented a reconfigurable load-balanced TDM switch IC with SERDES interface circuits for high speed networking applications. An N times N TDM switch could be constructed recursively from the TDM switch IC to achieve switching capacity of hundred gigabits per second or higher. The TDM switch IC contained a digital 8 times 8 TDM switch core with 8B10B CODECs and analog SERDES...
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