The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
N-channel MOSFETs are often applied to the input/output ports as electrostatic discharge (ESD) protection elements, usually in the form of multi-finger placement. However, the non-uniform turned-on situation always occurred, therefore these sub-nMOSFETs can't conduct-on simultaneously. The ESD current will be passed through a few turned-on MOSFETs. It was due to the RBulk resistance of parasitic bipolar...
An investigation of leakage-biasing-voltage (VLB) influence on the final measurement data of TLP testing is proposed in this work. In order to identify the impact on electrostatic discharge (ESD) immunity evaluation, three kinds of MOSFET DUTs are used, which are the LVnMOS (5-V/0.6-um), HVnMOS and HVpMOS (12-V/0.6-um) technologies devices, respectively. After a series of systematic TLP measurement,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.