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State-of-the-art power semiconductor industry uses figure-of-merits (FOMs) for technology-to-technology and/or device-to-device comparisons. However, the existing FOMs are fundamentally nonlinear due to the nonlinearities of the parameters such as the gate charge and the output charge versus different operating conditions. A systematic analysis of the optimization of these FOMs has not been previously...
The switching performances of the integrated high voltage power MOSFETs that have prevailing interconnection matrices are being heavily influenced by the parasitic capacitive coupling of on-chip metal wires. The mechanism of the side-by-side coupling is generally known, however, the layer-to-layer coupling and the comparison of the layout impacts have not been well established. This paper presents...
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