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0.25 μm emitter InP/InGaAs double heterojunction bipolar transistors (DHBTs) are presented that simultaneously exhibit a high collector current density (Jc) of more than 3 mA/μm2 and high breakdown voltage (BVCEO) of 12 V. The DHBTs consist of a 30 nm-thick InGaAs base, 250 nm-thick InGaAs/InAlGaAs/InP collector and 150 nm-thick n-doped InP field buffer. Since the doping level of the InP field buffer...
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