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In this paper, we propose a new gate engineered dopingless tunnel field effect transistor (GEDL-TFET). GEDL-TFET has double gate and uses metals of different work functions to realize source and drain regions in undoped silicon; a charge plasma concept. The novelty of the device is the use of dual material top gate and thus two gates appear at the top, main gate 1 and a tunneling gate (TG). The use...
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