The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we simulate and investigate a novel Tunnel Field-Effect Transistor (TFET) using the charge plasma concept on the source side. Herein, an inverted p-type source is created to form a p+-n tunneling diode structure on a uniformly n-type doped thin silicon film, hence named, Inverted-TFET (I-TFET). Using calibrated simulations, we verify that the Ion is boosted (□ 20 times) in the proposed...
In this paper, we propose a new gate engineered dopingless tunnel field effect transistor (GEDL-TFET). GEDL-TFET has double gate and uses metals of different work functions to realize source and drain regions in undoped silicon; a charge plasma concept. The novelty of the device is the use of dual material top gate and thus two gates appear at the top, main gate 1 and a tunneling gate (TG). The use...
In this paper, we propose a new structure of a lateral bipolar junction transistor (LBJT) on silicon on insulator (SOI), employing multi zone collector drift region. The novelty of the device is the use of charge plasma concept to realize emitter, base and multi zone collector drift regions. Here metals of different work functions are used to realize these regions instead of conventional doping methods...
In this work, we propose a new structure of a double gate dopingless metal oxide semiconductor field effect transistor (MOSFET). The proposed device does not employ the conventional ways of ion implantation or diffusion to realize source and drain regions. However, it uses metals of different workfunctions to induce n+ source and drain regions in undoped silicon; a charge plasma concept. A 2D numerical...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.