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As the RFID based Internet of Things (loT) gets worldwide attention, to prepare for the rapidly increasing applications in daily life, various security protocols are proposed. But, these protocols, most of which are limited by the tag processing capacity and dangerous exposure during transmission, could only be applied in certain fields. Previously, Chen and Deng's mutual authentication and privacy...
Accurately estimating the probability distribution of renewable power production is a fundamental and challenging task in the probabilistic analysis of power systems with a high penetration of renewable energy. In this study, a novel hybrid method of minimum frequency and maximum entropy (MFME) is proposed for accurately and rapidly estimating the probability density function (PDF) of renewable power...
In this paper we investigate the potential-based finite element algorithms for eddy-current problems. In our models the source coil carries a pulse excitation current generating a transient field. As distinguished from the traditional coupled algorithm whose discrete equation system including both vector and scalar potential unknowns is solved at every time-step, a novel decoupled algorithm is presented...
We report high performance (100) and (110) oriented single-grain TFTs below 600°C by orientation controlled μ-Czochralski process. Due to surface and in-plane orientation control, the uniformity approaches to the SOI counterpart. Electron mobilities are 732cm2/Vs for (100) and 630cm2/Vs for (110). Devices show stable performance under gate and drain stress respectively. After applying electrical stress...
We report high performance (100) and (110) oriented single-grain thin-film-transistors (SG-TFTs) fabricated below 600??C without any seed substrate. The orientation has been contolled by ??-Czochralski process with the excimer laser. Field-effect mobility of n-channel transistor is 998cm2/Vs for (100) SG-TFTs and 811cm2/Vs for (110) SG-TFTs. Field-effect mobility of p-channel transistor is 292cm2/Vs...
The reaction between Ni and amorphous SiGeC thin film on SiO2 substrate is investigated. Four point probe (FPP), X-ray diffraction (XRD) and Auger electron spectroscopy (AES) depth profiling are used to check the sheet resistance, the phase formation and atomic distribution during the reaction. It is found that comparing with Ni reaction with a-SiGe, the phase change of Ni reaction with a-SiGeC is...
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