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This paper presents a comparative evaluation of the loss and thermal performance of two advanced three-level inverter topologies, namely the partial silicon carbide (SiC) T-Type and the Hybrid-neutral-point-clamped (NPC), both of which are aimed at reducing the high switching losses associated with a conventional Si T-Type inverter. The first solution directly replaces the 1200 V primary Si IGBT switches...
This paper presents a comparative evaluation of the loss and thermal performance of two advanced three-level inverter topologies, namely the SiC based T-Type and the Hybrid-NPC, both of which are aimed at reducing the high switching losses associated with a conventional Si based T-Type inverter. The first solution directly replaces the 1200V primary Si IGBT switches with lower loss 1200V SiC MOSFETs...
This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost...
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