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An ultra-compact 10-wavelength WDM echelle grating receiver is demonstrated with 250 Gbps data receiving capability on a footprint of 0.96 mm2. Less than 1 dB channel-to-channel sensitivity variation is obtained at 25 Gbps.
A receiver based on Ge waveguide photodetector wire-bonded to 90nm CMOS amplifier built in specialty SOI wafer demonstrates error-free operation up to 40Gbps. At 25Gbps the receiver achieved a sensitivity of −8.3dBm with 3.3pJ/bit power-efficiency.
Receiver based on Ge waveguide PD hybrid-integrated with CMOS amplifier shows an unprecedented data rate of 20Gbps, −7.1dBm sensitivity, and 7pJ/bit power efficiency. Further improvement is obtained with avalanche gain and feed-forward equalization.
We demonstrate the resonance wavelength and quality factor dependence of 50nm defect-hole placement within photonic crystal L3 microcavities. Proper placement of defect-holes leads to a 12% increase in photonic crystal sensor detection sensitivity.
Photonic crystal cavities with tunable surface area via multiple-hole defects were investigated for increased resonance wavelength shifts upon exposure to variable-index analytes. Sensitivity was improved by 10% compared to simulated solid L3 cavities.
A waveguide-integrated Germanium avalanche photodetector with 6dB sensitivity improvement and excess noise with keff ∼ 0.1 was demonstrated while operating with 12dB gain at around 3V bias voltage. The photodetector was monolithically integrated into front-end CMOS.
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