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In this paper thermal characteristic and front facet of the 808 nm GaAs-Based laser diodes (LDs) before and after degradation are presented and discussed. The relation between thermal characteristic and the change of facet is analyzed. Aging tests are carried out under the conditions of the constant current stress (3 A), and the junction temperature of LD is fixed at 70°C. The total thermal resistance...
Thermal transient measurement of the 808 nm GaAs-Based laser diodes (LDs) before and after the constant current stress are presented and discussed in this paper. Aging tests are carried out under the conditions of the constant current stress (1 A) for 255 hours. The total thermal resistance increases from 7.0 to 8.8°C/W before and after degradation. Furthermore, the contribution of each component...
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