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Self‐Driven Near‐Infrared Photodetectors
In article number 2206262, Hao Jin, Longbiao Huang, Zhenhua Sun, and co‐workers report that bulk photovoltaic effect (BPVE) is found in the SnTe film by Si doping though breaking the inversion symmetry. As a result, additional current originated from the BPVE is generated beyond the p‐n junctions, leading to an improvement of photocurrent by 7.5 times.
The upsurge of new materials that can be used for near‐infrared (NIR) photodetectors operated without cooling is crucial. As a novel material with a small bandgap of ≈0.28 eV, the topological crystalline insulator SnTe has attracted considerable attention. Herein, this work demonstrates self‐driven NIR photodetectors based on SnTe/Si and SnTe:Si/Si heterostructures. The SnTe/Si heterostructure has...
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