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A ${V}$ -band on-chip triangular planar monopole antenna implemented with a partially reflective surface (PRS) using standard 0.13-$\mu \text{m}$ BiCMOS technology is presented. The PRS, which is realized with a dual-layered gangbuster type-4 frequency selective surface structure, is designed to obtain 90% reflection of the incident power, thus reducing the power loss caused by the lossy silicon...
This paper presents a V-band on-chip triangular planar monopole antenna using IBM 0.13-µm BiCMOS technology. A partially reflective surface (PRS), which is realized with a dual-layered Gangbuster type-4 FSS structure, is exploited to increase the antenna frequency bandwidth, radiation efficiency and gain. The overall size of the antenna, including the PRS, is 0.86 mm2. The measured S11 is smaller...
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