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We report on the characterization of the chemical and electronic interface structure of the heavily intermixed In2S3/Cu(In, Ga)Se2 (CIGSe) interface. Discussing our findings inferred from direct and inverse photoemission as well as soft x-ray emission spectroscopy, we particularly focus on the impact of the interfacial intermixing/interdiffusion processes on the electronic band alignment at the interface...
We have investigated the surface and near-surface bulk chemical properties of differently stressed (Au/Cu/)CdTe/CdS thin-film solar cells. The employed Au/Cu contact design created unique samples in which both the back contact surface/interface and the (back) surface of the CdTe absorber were exposed. X-ray photoelectron spectroscopy and soft x-ray emission spectroscopy were employed to determine...
The chemical bath deposition (CBD) of CdS layers on Cu(In,Ga)Se2 (“CIGSe”) absorbers on flexible polyimide substrates is examined using a combination of soft x-ray emission (XES) and photoelectron (XPS) spectroscopies. For this purpose, absorbers with with varying degrees of Cu-deficiency and NaF precursor thickness were studied. From the data, a detailed picture of the chemical surface composition...
We present a study of low-energy ion surface cleaning treatments and their impact on the surface electronic structure of an air-exposed CdTe thin film treated with CdCl2. In order to determine the electronic structure using surface-sensitive photoemission, surfaces need to be free of contaminants. This is achieved by subsequent low-energy ion treatment steps, carefully monitoring the chemical and...
In a cross-sectional X-ray energy dispersive spectroscopy mapping study of sputtered CdTe cells, sulfur was found to migrate and accumulate near the back contact. X-ray emission spectra of chloride-treated CdS/CdTe films confirm the accumulation of sulfur at the back surface. A part of the surface sulfur is found to be oxidized in the form of sulfate when Cu is present at the back contact.
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