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Phase-change memory (PCM) cells on a single carbon nanotube field-effect transistor (CNFET) are demonstrated toward the realization of the 1TnR array architecture. The use of CNFET as one-dimensional selector, which exhibits ultra-low leakage (< 1 pA) and large ON/OFF ratio (> 106) at high current densities, enables the cost-effective PCM cell to operate with a wide voltage margin in large 2D...
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