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We investigate the types and origins of structural defects in thin (<100 µm) kerfless epitaxial single crystal silicon grown on top of reorganized porous silicon layers. Although the structural defect density is low (has average defect density < 104 cm−2), localized areas with a defect density > 105 cm−2 are observed. Cross-sectional and systematic plan-view defect etching and microscopy...
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