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Data transfer bandwidth and the related energy consumption has become two of the most critical bottlenecks in conventional von-Newman architecture, owing to the separation of the processor and memory units and the performance mismatch between the two. Realization of the unity of logic computing and data storage in the same die has opened up a promising research direction of in-memory computing (IMC)...
With the problem of water pollution is more and more prominent, online measurement of various parameters has been a basic requirement for the sake of water quality protection. However, the online monitoring equipment is very expensive, which hampereds the scope and effect of monitoring. Thus, soft measurement technology in industrial sewage which using neural networks and data driven method can be...
Magnetic random access memory (MRAM) has been widely studied for future nonvolatile working memory candidate. However, the mainstream current (spin transfer torque, STT or spin Hall effect, SHE) driven MRAMs (STT-MRAM or SHE-MRAM) face intrinsic problems in terms of high write power and long latency, significantly limiting the applications for low-power and high-speed working memories. The recently-developed...
To study the damage problem of reconnaissance satellite under the information countermeasures soft kill conditions, fault tree of satellite performance has been built and destructive level to distinct the degree of the satellite damage has been proposed linked by the satellite reconnaissance information link. Satellite damage assessment based on the multi-state fault tree was proposed and has been...
Multi-level cell (MLC) is an efficient solution to improve the storage density of the MRAM. However, the conventional spin transfer torque-based MLC (STT-MLC) suffers from the performance bottlenecks such as high write energy and complicated two-step operation. In this work, we propose a spin Hall effect-based MLC (SHE-MLC) to overcome these bottlenecks. In the SHE-MLC structure, the write current...
Spin transfer torque magnetic random access memory (STT-MRAM) has emerged as a promising candidate for the next-generation nonvolatile memory. However, because of the increased process variations and reduced critical switching current of the magnetic tunnel junction (MTJ), the readability has become a new obstacle for STT-MRAM in scaled technology nodes. Thermal fluctuations further aggravates this...
Emerging spin orbit torque (SOT) promises to achieve high-speed write operation for magnetoresistive random access memory (MRAM) since it can eliminate the incubation delay of the conventional spin transfer torque (STT). Such a speed improvement allows the MRAM to be used as low-level cache in the computer architecture. Among various SOT technologies, spin-Hall-assisted STT is a potential candidate...
Due to its non-volatility, high access speed, ultra low power consumption and unlimited writing/reading cycles, STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) has emerged as the most promising candidate for the next generation universal memory. However, the process of commercialization of STT-MRAM is hampered by its poor reliability. Generally, these reliability issues are caused by...
Spin transfer torque magnetic random access memory (STT-MRAM) is a potential candidate for next generation universal memory technology, which possesses the high density and cost benefits of DRAM, the high access speed of SRAM, the non-volatility of Flash, compatibility with CMOS and essentially unlimited endurance. However, STT-MRAM commercialization is hampered by the reliability issues, especially...
STT-MRAM has been considered as one of the most promising nonvolatile memory candidates in the next-generation of computer architecture. However, the read reliability and dynamic write power concerns greatly hinder its practical application. In this paper, we propose a synergistic solution, namely pseudo-differential sensing (PDS), to jointly address these two concerns. Three techniques, including...
Spintronic-based integrated circuits have been widely considered as potential candidates for space application, due to the fact that their core devices (e.g. magnetic tunnel junction, MTJ) are intrinsic insensitive to radiation effects. However, their CMOS peripheral circuits are still vulnerable to radiation effects. In order to solve this problem, radiation hardening techniques (by process or by...
In this paper, a frequency estimation method based on complex correlation is proposed with TIADC (time-interleaved ADC) theory. Firstly, received signal is processed by amplification, filter, and quadrature demodulation. Then, TIADC is adopted to data acquisition, and parallel operation of complex correlation is used to deal with complex signal. Finally, signal frequency is acquired with phase angle...
Spin transfer torque magnetic random access memory (STT-MRAM) has been widely considered as one of the most promising candidates for the next-generation nonvolatile memory technologies, thanks to its attractive features, including high density, high speed, low power and high endurance etc. However, our investigation demonstrates that read disturbance may become a big reliability issue of STT-MRAM,...
Spin transfer torque magnetic random access memory (STT-MRAM) has emerged as a potential candidate for the next-generation universal memory technology. However, many challenges still exist that block its commercialization and application. One of the main challenges is the reliability concerns, especially as technology scales down to nanometer nodes. For example, the intrinsic stochastic switching...
The working mechanism of vertical mill system and the classification mechanism of the separator are analyzed at the same time. Based on the previous research results, the problems of modeling and control for grinding process are studied in details. By using the data information which obtained from the working process, modeling and control strategy are reviewed. By analyzing the process of grinding...
Spin transfer torque magnetic random access memory (STT-MRAM) has been considered as a potential candidate for the next-generation nonvolatile memory. However, as technology continuously scales down, the sensing margin (SM) of STT-MRAM is significantly degraded because of the increased process variations and reduced supply voltage. Meanwhile the critical switching current of magnetic tunnel junction...
Spin transfer torque magnetic random access memory (STT-MRAM) is currently under intensive investigation for one of the possible alternatives to extend the Moore's Law beyond the CMOS technology scaling limit. Its advantageous features, such as nonvolatility, high speed, low power and excellent scalability etc, attract worldwide R&D attention. However as technology scales (e.g., below 40 nm),...
Benefiting from its inherent hardness to radiation and non-volatility, magnetic random access memory (MRAM) is considered as one of the most promising non-volatile memory (NVM) technologies for aerospace and avionic electronics. However, MRAM is still sensitive to single event upsets (SEU) due to its CMOS employed peripheral circuit. In this paper, we propose a novel SEU-tolerant MRAM latch circuit,...
Emerging magnetic random access memory (MRAM) has been considered as a promising candidate for the next generation high speed, low power and scalable nonvolatile memory technology. However many challenges and issues are still existing before its wide commercialization. One of the critical issues is its low sensing reliability due to the relatively small tunnel magneto-resistance (TMR) ratio of the...
As the underwater acoustic channel is time-frequency variable, the synchronization plays an important role in whole communication. In this paper, the tradition signal of LFM (linear frequency modulation) is taken as the synchronization signal, and a flexible technique method to detect LFM signal are proposed with little resources. Compared to the basic one, the optimized structure uses the multiple-cycle...
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