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As process technology downscales, read reliability has become a critical barrier for spin transfer torque magnetic random access memory (STT-MRAM), owing to the increasing process-temperature-voltage (PVT) variations, decreasing critical switching current of magnetic tunnel junction (MTJ) and supply voltage. To deal with the read reliability challenge, we propose herein a dynamic dual-reference sensing...
Spin transfer torque magnetic random access memory (STT-MRAM) is currently under intensive investigation for one of the possible alternatives to extend the Moore's Law beyond the CMOS technology scaling limit. Its advantageous features, such as nonvolatility, high speed, low power and excellent scalability etc, attract worldwide R&D attention. However as technology scales (e.g., below 40 nm),...
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