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Multichip power modules use parallel connected chips to achieve high current rating. Due to a finite flexibility in a DBC layout, some electrical asymmetries will occur in the module. Parallel connected transistors will exhibit uneven static and dynamic current sharing due to these asymmetries. Especially important are the couplings between gate and power loops of individual transistors. Fast changing...
In this paper the triple pulse testing method and circuit for power loss characterization of power modules is introduced. The proposed test platform is able to accurately characterize both the switching and conduction losses of power modules in a single automated process. A configuration of a half bridge is tested by making a sweep of the junction temperature, dc-link voltage, and current for a given...
Thermal loading of power devices are closely related to the reliability performance of the whole converter system. The electrical loading and device rating are both important factors that determine the loss and thermal behaviors of power semiconductor devices. In the existing loss and thermal models, only the electrical loadings are focused and treated as design variables, while the device rating...
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