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Modified stacking sequence of precursors and pre-annealing process on Se vapor at low temperature were applied to Cu(In,Ga)Se2 (CIGS) solar. The remarkable improvement of efficiency (5.53–10.10% and further 11.04%) and open circuit voltage (0.41V–0.53V and further 0.56V) comes from a compact, smooth microstructure, and modified depth profile of Ga with suitable thickness of CuGa multi-stacking layers...
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