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In this letter, we display InGaN/GaN-based photovoltaic (PV) devices with active layers in absorbing the solar spectrum around blue regions. The GaN/In0.25Ga0.75 N superlattice layers grown by metalorganic vapor-phase epitaxy are designed as the absorption layers with the same total thickness. The PV effect is almost absent when the In0.25Ga0.75N single layer is used as the absorption layer. This...
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