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In this letter, we develop a no-snapback silicon-controlled rectifier (NS-SCR) in a 0.35-$\mu {\mathrm{ m}}$ BCD technology. This device is constructed by embedding in a typical SCR a p-type/intrinsic/n-type diode as the trigger element and two highly doped extension regions as parts of the bases of the parasitic bipolar transistors. These added features allow for a high electric field to be maintained...
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