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We present a new design of InGaAs metal-semiconductor-metal (InGaAs-MSM) photodetectors placed in optical resonant cavities in order to reduce inter-electrode spacing while keeping a high photoresponse. Its static and dynamic photoresponse properties have been measured by means of a photomixing experiment up to 67 GHz, showing the potential of this device for GHz and THz applications.
It is shown from accurate on-wafer measurement that a low-temperature-grown GaAs photoconductor using a metallic mirror Fabry-Perot cavity can serve as highly efficient optoelectronic heterodyne mixer in the terahertz frequency range. Conversion losses of 22 dB at 100 GHz and ∼27 dB at 300 GHz were measured, which is an improvement by a factor of about 40 dB as compared with the previous values obtained...
Room temperature homodyne and heterodyne THz detections are reported using an 1.55 mum-based THz source. The first experimental demonstration is a continuous wave terahertz homodyne detection, where THz emission is performed with an InGaAs/InP uni-travelling carrier photodiode monolithically integrated with a horn antenna. The coherent homodyne detection is achieved with an ion-irradiated InGaAs photoconductor...
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