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A ZVS three level two transistor forward DC/DC converter (input 600 V, output 48 V/50 A) is proposed. The performance of a 600 V/10 A silicon carbide (SiC) Schottky diode (Cree CDS10060) is experimentally evaluated on the prototype. Reverse recovery and overall efficiency are compared between the SiC diode and fast soft-recovery silicon power diode
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