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The 1/f noise and shot noise studies were carried out on molecular beam epitaxy (MBE)-grown ZnS0.85Se0.15 and Zn0.43Mg0.57S ultraviolet (UV) detectors packaged in surface mount lead frames. Three ZnS0.85Se0.15 detectors with different thicknesses of the active layer and the top electrode pad were used. The highest onset of reverse bias for the appearance of 1/f noise is −27.5 V, and the highest dark...
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