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The reliability of copper through-silicon vias (TSVs) has been shown to be largely determined by the microstructure and extrusion statistics, and the mechanism for this requires further investigation. Synchrotron x-ray microdiffraction is an advantageous technique for TSV measurements due to its high beam intensity, which allows for full stress derivation with submicron resolution, and its nondestructive...
X-ray microbeam diffraction measurements were conducted for copper (Cu) through-silicon via (TSV) structures. This technique has the unique capability to measure stress and deformation in Cu and in silicon with submicron resolution, which enables direct observation of the local plasticity in Cu and the deformation induced by thermal stresses in TSV structures. Grain growth in Cu vias was found to...
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