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To realize low-cost and damage-less through silicon via (TSV) formation, we evaluated the damage caused by a new wet-chemical Si-wafer thinning/backside via exposure process. Damage at the etched Si subsurface was examined using ball-on-ring tests, cross-sectional transmission electron microscopy, and electron energy loss spectroscopy. The die fracture load obtained after this process was higher than...
We evaluated the damage of an etched silicon surface after the wet-chemical silicon-wafer thinning process. The damage evaluation was carried out by cross-sectional transmission electron microscope (TEM) observation/electron energy-loss spectroscopy (EELS) analysis of the etched surface and measurement of die fracture stress. The results of the TEM observation/EELS analysis indicated the absence of...
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