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In this study, the nanorods of 100–150nm diameter on an InGaN/GaN multi quantum well (MQW) structure were fabricated using self-assembled nickel metal nanomasks and inductively coupled plasma reactive ion etching. The photoelectron- chemical (PEC) methods were applied to oxidate the InGaN/GaN MQWs nanorods. After 5V/80min oxidation, the measured PL from the embedded InGaN/GaN MQWs shows an energy...
We have demonstrated the high operation current up to 400 mA for the laser lift-off InGaN/GaN LEDs on Cu heat sink with 3.5 fold increase in the light output power over the regular LEDs.
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