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In this paper a Gallium Nitride MMIC technology for RF‐ and microwave and high power amplifiers based on 100 nm gate technology is presented. The MMIC technology includes alloyed ohmic contacts, T‐shaped 100 nm gates, air‐bridges, MIM capacitors, inductors, and a full through wafer viahole backside process. As a key element for a high MMIC yield, we'll present low ohmic contact resistances with a...
We report on the trade‐off between performance and reliability for AlGaN/GaN transistors. It is shown that changes in epitaxial growth, transistor design and process may lead to an improvement in performance but are, at the same time, accompanied by a degradation of device reliability. As a result we show strategies in order to balance performance and reliability as both are linked. Based on these...
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