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In this paper the recent use AlGaN/GaN high electron mobility transistors (HEMTs) and integrated circuits on both semi‐insulating silicon carbide (SiC) and silicon substrates for radio communication in the microwave and mm‐wave frequency range is described. AlGaN/GaN monolithically microwave integrated circuits (MMICs) are extremely useful for point‐to‐point (P2P)‐links in the backbones of the 4th...
We present the current status of our technology for GaN‐based HEMTs and MMICs as well as results ranging from the L‐band up to the W‐band. Epitaxial growth is carried out on 4H‐SiC(0001) substrates by both MOCVD and MBE. Processing is done using standard III–V equipment including both frontside and backside processing. For L‐band power bars we arrive at output powers, efficiencies and gains beyond...
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