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We evaluate the optical performance of AlGaN/GaN MISFETs as a non-resonant sub-terahertz, room temperature detector. The single-pixel responsivity and the noise equivalent power are determined. The efficiency of the detection is demonstrated by the room temperature imaging of different solutions of acetone in cyclohexane.
GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300 μm. We demonstrate that, with applied drain to source current, the imaging at up to 2.5 THz is possible.
We report on investigations of photovoltaic response of Si-MOSFETs subjected to Terahertz radiation in high magnetic fields. The MOSFETs develop a dc drain-to-source voltage that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively...
We report on the observation of photocurrents in GaAs High Electron Mobility and Si Field Effect Transistors. We show that illuminating the samples with high power terahertz laser radiation causes electric currents. These currents are driven by plasmonic effects in two dimensional electron gases.
We review a few recent results concerning the physics and applications of Field Effect Transistors ( FETs) as Terahertz detectors and emitters. Particularly we stress results concerning dependance of THz detection and emission on high/quantizing magnetic fields and the geometry of the transistor channel.
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