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We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.
We evaluate the optical performance of AlGaN/GaN MISFETs as a non-resonant sub-terahertz, room temperature detector. The single-pixel responsivity and the noise equivalent power are determined. The efficiency of the detection is demonstrated by the room temperature imaging of different solutions of acetone in cyclohexane.
New THz chip solid-state detectors and sources are waited for many applications. The idea of new sources and detectors, based on the oscillations of bidimensional plasma, was theoretically and experimentally demonstrated. We present technological process of nanometric devices dedicated to THz emission. In this structure, a MIM gate-source capacitance is integrated to HEMT to achieve the boundary condition...
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