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We report on newly developed high-density quantum-dot lasers that provide extremely temperature-insensitive 10.3 Gb/s operation and higher-speed operation up to 20 Gb/s which is the first demonstration in 1.3 mum quantum-dot lasers.
We proposed a high-current backside-illuminated InGaAs/InP p-i-n photodiode (PD) with a non-absorbing drift region, and demonstrated an RF power output of 29.0 dBm at 5 GHz, a 3-dB bandwidth of 7 GHz, and a third order intercept point of 31 dBm at 2 GHz using a 70-mum-diameter PD.
Temperature-insensitive 10.3-Gb/s operation under fixed driving condition was demonstrated using directly-modulated InAs/GaAs high-density quantum dot lasers, maintaining an Ethernet mask margin of 48 % up to 100degC. 20-Gb/s direct modulation has also been demonstrated.
The structural stability of InAs stacking-fault tetrahedron (InAs-SFT) on GaAs(111) is systematically investigated in terms of strain relaxation by using an empirical potential incorporating electrostatic energy contribution. The InAs-SFT is more stable than coherently grown InAs on GaAs(111) beyond 21 monolayers (MLs), which are comparable with critical film thickness of misfit dislocation generation...
Polarization insensitivity of InAs/GaAs quantum dot optical amplifier has been demonstrated by controlling dot shape. This polarization insensitivity covers a bandwidth in excess of 40 nm.
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