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We present a fully integrated 94-GHz transceiver front-end in a 130-nm/1.1-THz $f_{{{\text {max}}}}$ InP HBT process. Low power is obtained through low-voltage design and high transistor gain. The IC is designed for multi-function, dual-polarization phased arrays. At 1.5-V collector bias, in dual-polarization simultaneous receiving mode, the IC has 21-dB gain, <9.3-dB noise figure, and consumes...
We present a fully-integrated 94 GHz transceiver front-end in a 130 nm / 1.1 THz fmax InP HBT process. Low power is obtained through low-voltage design and high transistor gain. The IC is designed for multi-function, dual-polarization phased arrays. At 1.5 V collector bias, in dual-polarization simultaneous receiving mode, the IC has 21 dB gain, < 9.3 dB noise figure, and consumes 39 mW, while...
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