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We present a high-linearity pseudo-differential W- band amplifier IC, implemented in a 130 nm InP HBT process in a 1.1×0.72 mm2 die. Correcting for test structure losses, the amplifier has a measured 21.9 dBm output-referred 3rd order intercept point (OIP3) and a single-stage gain of 6.4 dB at 100 GHz. The amplifier has a noise figure of 6.8 dB +/- 1dB at 95 GHz. The OIP3/Pdc ratio is 0.79 at 100...
We present power amplifier ICs with a small-signal measured 3dB-bandwidth spanning from 24 GHz to 114 GHz, implemented in a 130 nm InP HBT process. The PAs were designed using sub-quarter wavelength transmission-line baluns for output matching and series power combining. The small signal gain is 15 dB and the DC power consumption is 800 mW in low power operation. The measured output power at 3-dB...
We report 220 GHz Solid State Power Amplifier (SSPA) using a 250nm Indium Phosphide HBT technology. Amplifiers reported include designs having 2 and 4 power combined cells. The 4-cell amplifiers exhibited 10 dB small signal gain and 48.8 mW of output power with 4.5 dB gain at 220 GHz. These amplifiers have a 3-dB small signal bandwidth of greater than 48 GHz. A 5-µm thick BCB microstrip wiring environment...
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