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This work presents our recent progress on addressing two major challenges to realizing GaN-Silicon integration namely epitaxial growth of GaN-on-Silicon and CMOS-compatible process. We have successfully demonstrated 0.3-μm gate-length GaN HEMTs on 8-inch Si(lll) substrate with fT of 28GHz and fmax of of 64GHz. These device performances are comparable to our reported devices fabricated on 4-inch Si...
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