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With the rapid advances in graphene field-effect transistor (GFET) performances, graphene has attracted much interest as a future channel material in RF electronics. However, the pace of the development of graphene circuits seems significantly slower. Several graphene circuits demonstrated today showing promising GHz functions still relied on ideal discrete passive components connected at the equipment...
Remarkable progress has been made in both graphene RF transistor level [1] and the circuit level [2]. Despite the demonstrated high current gain cutoff frequency (fT), most devices also show significantly lower maximum oscillation frequency (fMAX), which is a crucial figure of merit that really determines the device performance in most RF circuits. It is well known that gate resistance (Rg) plays...
High-performance graphene field-effect transistors are fabricated on two-inch graphene-on-SiC wafers. Epitaxial graphene was synthesized on SiC wafers by thermal annealing to form one to two layers of graphene. The graphene transistors possess high current density of > 1mA/µm, and a cutoff frequency of 170 GHz is achieved for graphene FETs with a gate length of 90 nm. These results unravel the...
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