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3D integration and packaging with through silicon via (TSV) is a promising method to overcome the limitation of integration scale in Micro-Electro-Mechanical Systems (MEMS) packaging. It is helpful to realize high density and reliability micro-devices. The technology of fabricating copper (Cu) TSVs by electroplating is applied to provide signal connection in vertical direction. However, the fabrication...
In this paper, FEA model of Cu-Sn micro-bump bonding module and Cu-Sn micro-bump/BCB adhesive hybrid bonding module subjected to thermal cycling are built respectively. Two types of double-chip-stacking module, with and without BCB, are prepared. Followed by a thermal cycling test, during which mechanical and electrical test are also implemented to assess the reliability of the bonded micro-bumps...
Due to its many advantages over traditional 3D packaging technology, through silicon via (TSVs) is being widely used. However, there are still a variety of obstacles hindering it from being developed rapidly. One of them is the huge thermal stress induced by big CTE mismatch between silicon and copper, which would even induce interfacial delamination. In this paper, thermal stress is evaluated first...
Through silicon via (TSV) is an emerging technology for MEMS packaging for MEMS packaging. 370µm deep TSV vias with diameter of 60µm were filled by bottom up copper electroplating with copper methylsulfonate and methane sulfonic acid as base electrolyte. Insulating layer of the wafer was silicon nitride deposited by LPCVD. The TSV vias filling processes include electroplating to fill the vias and...
TSV fabrication consists of five major processes: via formation, via filling, wafer thinning, wafer handling, and die/wafer bonding [1–2]. Wafer thinning is one of key TSV processes which contributes more than 20% of TSV manufacturing cost and should be studied in a systematic manner. In wafer thinning process, especially for ultra-thin wafers, a reliable handling system is indispensable. The best...
Transient responses of 3D stacked-die package with through silicon via (TSV) structure under board level drop test load following the JEDEC standard are investigated using the Input-G finite element simulation method. In order to reduce the finite element mesh size the stacked-die package under investigation is modeled with details while the others are simplified as blocks with equivalent material...
A finite element model which includes electromigration, thermomigration, stress migration and concentration diffusion is established to study the mass diffusion phenomenon. Numerical experiment is carried out to obtain the electrical, thermal, stress and atomic concentration fields of the sweat and through silicon via (TSV) structure under high current density load. The effectiveness of the electromigration...
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