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W-band MMIC (monolithic microwave integrated circuit) direct-detection receivers for passive millimeter-wave imaging applications have been demonstrated. These receivers were developed using InGaAs HEMT (high electron mobility transistor)-based W-based LNA (low-noise amplifier) and preamplified detector MMICs. The first receiver uses a 50-dB-gain, 6-dB-noise-figure amplifier and a Schottky-barrier-diode...
A monolithic W-band preamplified diode detector based on 0.1- mu m pseudomorphic AlGaAs-InGaAs-GaAs high-electron-mobility-transistor (HEMT) technology is discussed. This chip, consisting of a Schottky diode detector with a two-stage W-band low-noise amplifier (LNA), has a measured detector responsivity of 300 V/mW at 94 GHz and a tangential sensitivity of -62 dBm. This is the first reported monolithic...
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