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This article reports a wafer-level heterogeneous integration and vacuum packaging technology by thermocompression bonding using electroplated Cu sealing frame planarized by single-point diamond fly-cutting. A high grain boundary density on the Cu surface induced by mechanical stress application during fly-cutting process enables vacuum sealing with bonding temperature as low as 250°C. At such low...
Wafer-level vacuum sealing and electrical interconnection are often crucial for advanced device packaging. This article presents a novel packaging and integration technology, which is applicable to non-planar (i.e. microstructured) and/or temperature-sensitive wafers, by means of Au-Au low-temperature thermo-compression bonding utilizing electroplated Au microbump that surface has been planarized...
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