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In this paper, DC and AC performance of junctionless MOSFETs are extensively examined. A comparison is made between double-gate junctionless MOSFETs and conventional inversion-mode MOSFETs with an emphasis on the variability in performance. Despite clear benefits by eliminating junctions and related junction variabilities, junctionless MOSFETs are found to require double- or multi-gate in order to...
The gate-induced drain leakage current (GIDL) current is investigated in LDD nMOSFET's. It is shown that under constant drain-to-gate voltage (VDG) the difference between ID in the off-state ID-VG characteristics and the corresponding one in the off-state ID-VD characteristics, which is defined as DIFF, versus VDG shows a peak. Moreover, the natural logarithm of the maximum D IFF (DIFF, MAX) varies...
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