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In this chapter, we review some of the most recent results in these areas and put them in a unified context that covers a very wide range, from materials to system design. The first section presents a top-down silicon nanowire fabrication platform for high-mobility gate-all-around (GAA) MOSFETs and impact-ionization devices. Ferroelectric FET with sub-100-nm copolymer P(VDF-TrFE) gate dielectric are...
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