The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A WSe2‐based vertical graphene‐transition metal dichalcogenide heterojunction barristor shows an unprecedented on‐current increase with decreasing temperature and an extremely high on/off‐current ratio of 5 × 107 at 180 K (3 × 104 at room temperature). These features originate from a trap‐assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point.
In this letter, we demonstrate an n-indium–gallium–zinc–oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 and 600...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.