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We have examined the response of AlGaN/GaN power switching HEMTs to electrical bias stress. Three different gate stack structures were studied. In devices containing a ~ 5 nm thick AlGaN layer in the gate stack, both positive and negative shifts in the threshold voltage were observed following high blocking voltage stress, consistent with a short initial period of electron trapping followed by a longer...
This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al2O3 gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source...
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