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This work reports the bipolar resistive switching behavior of more than 100 back-end-of-line (BEOL) integrated 600×600nm2 TiN/HfO2/Ti/TiN MIM devices in a 4 kbit memory array. Reliable current-voltage switching characteristics were only observed for devices with a thickness ratio of 1 (10 nm HfO2/10nm Ti), indicating the importance of the interface chemistry of the Ti/HfO2 interface. Moreover, the...
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