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Nitrogen-doped amorphous carbon thin films have been prepared by thermal chemical vapor deposition (CVD) technique at different temperature. The preparation involved argon, camphor and nitrogen as carrier gas, carbon source and dopant respectively. The effects of nitrogen incorporation in the amorphous carbon thin film on electrical and optical properties was characterized by using Advantest R6243...
Amorphous carbon thin films have been grown on quartz substrates by an economical and simple technique, thermal CVD system with methane as starting material. Since, the decomposition of methane required high thermal energy, thus the deposition temperatures were varied from 700-1000°C. The formation of a-C thin films and its properties were characterized using UV-Vis Spectrophotometer and Advantest...
Amorphous carbon (a-C) thin films deposited with thermal CVD, have been characterized by a standard two-probe method using Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software and Raman scattering experiment at an excitation wavelength of 514.5 nm provided by HORIBA Jobin Yvon (HR800) Raman. The films were prepared at various deposition temperatures ranging from 650-900°C....
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