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A 60 GHz wideband power amplifier (PA) is fabricated in a standard CMOS SOI 65 nm process. The PA is based on two cascode stages. Input, output and inter-stage matching use coplanar wave guide (CPW) transmission lines that have low losses thanks to the high-resistivity SOI substrate (3 kΩ · cm). The PA measurements are carried out for supply voltages VDD going from 1.2 V to 2.6 V and achieve a saturation...
A super high order sub-harmonic pulsed-ILO at 60 GHz in 65-nm CMOS-SOI has been fully designed and tested. It occupies 0.16 mm2 active area in 65-nm CMOS-SOI. Input digital locking signal modulates the oscillator at 60 GHz from ON to OFF state using a current source. Thus, the millimeter wave oscillation does not start from the thermal noise but from one of the numerous harmonic components of the...
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