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Effect of substrate temperature on growth process were studied for GaAs on Si(110) vicinal surface by reflection high-energy electron diffraction. At the substrate temperature of 473K, three-dimensional islands of misoriented GaAs are formed on the vicinal surface. At 573K, three-dimensional GaAs islands with low density epitaxially grow at the step edges of the vicinal surface. At 673K, two-dimensional...
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