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This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/µm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at Lg = 100 nm. This record performance is achieved by using a low Dit composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway...
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