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A systematic GaN single heterojucntion HEMT (SH-HEMT) physical based numerical model is established in this paper. This model includes field-dependent mobility, polarization effect, interface state, surface state, and traps. The model has been implemented into TCAD Silvaco. And the simulated DC and RF characterization fit the measured results well. The high frequency noise performance of AlGaN/GaN/AlGaN...
A novel 3D tri-gate high power 4H-SiC MESFET with improved breakdown characteristic is presented in this paper. Different from the conventional structure, the proposed structure contains both horizontal and vertical active channels which contacted 3D tri-gate. This method, in fact, increases the equivalent channel width and therefore enhances the maximum drain current. And buried-channel technology...
4H-SiC MESFET with partly p-type doped space layer is proposed and the DC and RF characteristics are analyzed in this paper by 2D numerical simulation. The simulated results show that the breakdown voltage is about 56% larger than that of the conventional structure, and the saturated drain current obtained 4.4% enhancement too. The calculated maximum output power density at operation point VGS=-10...
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